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1W Deep Red LED (EPILED 640-660nm)

1W Deep Red LED 660nm High Power LED grow light component

1 Watt EPILED deep red LED for reflow soldering to printed circuit boards. 

This premium 1W LED uses a 38 Mil EPILED chip achieving a powerful deep red 120° colour beam peaking between the ranges of 640-660nm.

Designed specifically to aid photosynthetic response in grow lights and planted aquariums, this versatile and powerful LED produces up to 20 lumens of deep red whilst retaining a high level of efficiency even at higher drive currents. 

As with all power LEDs any LED array will need adequate heat management for optimal performance, efficiency and lifespan. As such this component must be mounted onto an aluminium or copper heat sink with a thermal glue/compound between the rear of the PCB and the surface of the heat sink. Even for 1W models active fan cooling is highly recommended particularly at higher drive currents. 

For convenience the general electrical and optical characteristics are listed below. For full manufacturers' specification please consult the datasheet provided here.

If you need further information please feel free to contact us as any time and our UK staff will be happy to help. 

* Please kindly note that these LEDs are intended for mounting onto a PCB for correct operation and not directly to a heat sink. If you need to site these LED individually or directly onto a heat sink, please view our LEDs that come pre-mounted onto aluminium star PCBs here.


Relative Spectral Power Distribution

1W Watt red high power LED for reef lighting fish tanks grow lights with PCB lamps illumination diodes SMD protoyping on circuit boards

Electrical and Optical Characteristics at IF=400mA and Ta=25°C  

Parameter  Symbol Min Typical  Max Units
Luminous Flux φv 10 ~ 20 lm
Wavelength λD 640 ~ 660 nm
Forward Voltage VF 2.0 ~ 2.6 V
Power Dissipation PD 0.80 ~ 1.04 W
View Angle 2θ1/2 ~ 120 ~ deg
Thermal Resistance Rθ J-B ~ 12 ~ °C/W

Absolute Maximum Ratings  

Parameter Symbol Value  Unit
Forward Current If 400 mA
Junction Temperature Tj 115  °C
Operating Temperature Topr -40~+60 °C
Storage Temperature Tstg 0~+60 °C
ESD Sensitivity  ~ +/- 2,000 V HBM ~
Temperature Coefficient of voltage ~ -5 mV/ °C
DC Pulse Current(@ 1 KHz,10% duty cycle) IFP 1000 mA
Reverse Voltage VR No reverse operation


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