3W Violet LED (410-420nm EPILED)
3W violet high power LED for solder mounting to printed circuit board (PCB). This high luminance LED uses a 45 Mil EPILED brand name chip, producing a pure violet 120° beam, with a wavelength peaking between 410-420nm.
Fantastic for use in aquatic, horticultural and commercial LED lighting this wavelength. This versatile and powerful LED produces up to 30 lumens when driven at maximum power, yet retains a high level of efficiency even at higher currents.
As with all high power LEDs this component must be mounted onto an aluminium or copper heat sink with a thermal glue/compound between the rear of the PCB and surface of the heat sink. This is crucial to attain optimal performance, efficiency and lifespan in any LED applications. Active fan cooling is highly recommended particularly at higher drive currents.
For convenience the general electrical and optical characteristics are listed below. For full manufacturers specification please consult the datasheet provided here.
If you require further information, please feel free to contact us as any time and our UK staff will be happy to help.
* Please note these LEDs are intended for mounting onto a PCB (printed circuit board) for correct operation. If you need to site these LED individually or need flexibility in your array, we recommend viewing our LEDs that come pre-mounted onto aluminium star PCBs here.
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Spectral Power Distribution
Electrical and Optical Characteristics at IF=750mA and Ta=25°C
| Parameter | Symbol | Min | Typical | Max | Units |
| Luminous Flux | φv | 20 | ~ | 30 | lm |
| Wavelength | λD | 410 | ~ | 420 | nm |
| Forward Voltage | VF | 3.5 | ~ | 4.5 | nm |
| Power Dissipation | PD | 2.63 | ~ | 3.38 | W |
| View Angle | 2θ1/2 | ~ | 120 | ~ | deg |
| Thermal Resistance | Rθ J-B | ~ | 12 | ~ | °C/W |
| Lifespan | ~ | 50,000 | ~ | ~ | Hours |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Forward Current | If | 750 | mA |
| Junction Temperature | Tj | 115 | °C |
| Operating Temperature | Topr | -40~+60 | °C |
| Storage Temperature | Tstg | 0~+60 | °C |
| ESD Sensitivity | ~ | +/- 2,000 V HBM | ~ |
| Temperature Coefficient of voltage | ~ | -5 | mV/ °C |
| DC Pulse Current(@ 1 KHz,10% duty cycle) | IFP | 1000 | mA |
| Reverse Voltage | VR | No reverse operation |
