800mA Infra Red High Power LED Components (740nm -745nm) – Future Eden Ltd
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Far Red / Infra Red LED (740-745nm EPILED)

Far Red / Infra Red LED (740-745nm EPILED) -

Far Red / Infra Red High Power LED for reflow soldering to printed circuit board (PCB). This high end LED uses a 42 Mil EPILED chip, producing a powerful far red/infra red light at a beam angle of 120°.  

A popular for aiding photosynthetic responses in plants when used within horticultural /grow lights and aquatic applications (the Emerson effect), this versatile and powerful LED retains high level of efficiency when running at full power. 

As with all high power LEDs this component must be mounted onto an aluminium or copper heat sink with a thermal glue/compound between the rear of the PCB used and the heat sink surface. This is crucial to attain optimal performance, efficiency and lifespan in any LED application.  Active fan cooling is highly recommended particularly at higher drive currents.  

For convenience the general electrical and optical characteristics are listed below. For full manufacturer's specification please consult the datasheet provided here.

If you require further information, please feel free to contact us as any time and our UK staff will be happy to help. 

* Please not that the wavelength 740-750nm is largely invisible to the human eye. If you are looking for a visible deeper red LEDs, please view our deep red LEDs here.

* Please also note LEDs are intended for mounting onto a PCB for correct operation and not directly to a heat sink. If you need to site these LED individually or directly onto a heat sink, please view our LEDs that come pre-mounted on aluminium star PCBs here.


Spectral Power Distribution  

Far Red high Power LED Spectral power graph  

Electrical and Optical Characteristics at IF=800mA and Ta=25°C

Parameter  Symbol Min Typical  Max Units
Wavelength λD 740 ~ 745 nm
Forward Voltage VF 1.8 ~ 2.2 V
Power Dissipation PD 1.44 ~ 2.24 W
View Angle 2θ1/2 ~ 120 ~ deg
Thermal Resistance Rθ J-B ~ 12 ~ °C/W
Lifespan ~ 50,000 ~ ~ Hours

Absolute Maximum Ratings

Parameter Symbol Value  Unit
Forward Current If 800 mA
Junction Temperature Tj 115  °C
Operating Temperature Topr -40~+60 °C
Storage Temperature Tstg 0~+60 °C
ESD Sensitivity  ~ +/- 2,000 V HBM ~
Temperature Coefficient of voltage ~ -5 mV/ °C
DC Pulse Current(@ 1 KHz,10% duty cycle) IFP 1000 mA
Reverse Voltage VR No reverse operation


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