Far Red / IR LED (740-745nm EPILED) - 800mA
Far Red / Infra Red High Power LED mounted on 19.8mm x 19.8mm aluminium PCB star. This premium LED uses a 42 Mil EPILED chip, producing a powerful far red/infra red light through a 120° water clear lens.
Popular for aiding photosynthetic responses in plants when used within horticultural /grow lights (the Emerson effect) along with other scientific applications, this versatile and powerful LED retains high level of efficiency at higher currents.
As with all high power LEDs this component must be mounted onto an aluminium or copper heat sink with a thermal glue/compound between the rear of the PCB used and the heat sink surface. This is crucial to attain optimal performance, efficiency and lifespan in any LED application. Active fan cooling is highly recommended particularly at higher drive currents.
For convenience the general electrical and optical characteristics are listed below. For full manufacturer's specification please consult the datasheet provided here.
If you require further information, please feel free to contact us as any time and our UK staff will be happy to help.
* Please not that the wavelength 740-750nm is largely invisible to the human eye. If you are looking for a visible deeper red LEDs, please view our deep red LEDs here.
____________________________________________________________________________________________________________________________
Spectral Power Distribution
Electrical and Optical Characteristics at IF=800mA and Ta=25°C
| Parameter | Symbol | Min | Typical | Max | Units |
| Wavelength | λD | 740 | ~ | 745 | nm |
| Forward Voltage | VF | 1.8 | ~ | 2.2 | V |
| Power Dissipation | PD | 1.44 | ~ | 2.24 | W |
| View Angle | 2θ1/2 | ~ | 120 | ~ | deg |
| Thermal Resistance | Rθ J-B | ~ | 12 | ~ | °C/W |
| Lifespan | ~ | 50,000 | ~ | ~ | Hours |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Forward Current | If | 800 | mA |
| Junction Temperature | Tj | 115 | °C |
| Operating Temperature | Topr | -40~+60 | °C |
| Storage Temperature | Tstg | 0~+60 | °C |
| ESD Sensitivity | ~ | +/- 2,000 V HBM | ~ |
| Temperature Coefficient of voltage | ~ | -5 | mV/ °C |
| DC Pulse Current(@ 1 KHz,10% duty cycle) | IFP | 1000 | mA |
| Reverse Voltage | VR | No reverse operation |
