Deep Red LED (EPILED 640-660nm) - 800mA
800mA High power Deep Red LED for mounting on printed circuit boards (PCB). This high luminance LED uses a 42 Mil EPILED chip, producing a powerful deep red 120° beam, with a wavelength peaking at 660nm.
Designed specifically to aid photosynthetic responses in horticultural and aquatic applications, this versatile and powerful LED boasts an impressive 50 lumens per chip when driven at full power. Due to the superior build quality and high specification of the EPILED chips these LEDs retain an excellent level of efficiency even at higher drive currents.
As with all high power LEDs this component must be mounted onto an aluminium or copper heat sink with a thermal glue/compound between the rear of the PCB used and the heat sink surface. This is crucial to attain optimal performance, efficiency and lifespan in any LED application. Active fan cooling is highly recommended particularly at higher drive currents.
For convenience the general electrical and optical characteristics are listed below. For full manufacturers specification please consult the datasheet provided here.
If you require further information, please feel free to contact us as any time and our UK staff will be happy to help.
* Please note LEDs are intended for mounting onto a PCB for correct operation and not directly to a heat sink. If you need to site these LED individually or directly onto a heat sink, please view our LEDs that come pre-mounted on aluminium star PCBs here.
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Spectral Power Distribution
Electrical and Optical Characteristics at IF=800mA and Ta=25°C
| Parameter | Symbol | Min | Typical | Max | Units |
| Luminous Flux | φv | 40 | ~ | 50 | lm |
| Wavelength | λD | 640 | ~ | 660 (peak) | nm |
| Forward Voltage | VF | 1.7 | 2.4 | 2.6 | V |
| Power Dissipation | PD | 0.085 | 1.95 | 2.08 | W |
| View Angle | 2θ1/2 | ~ | 120 | ~ | deg |
| Thermal Resistance | Rθ J-B | ~ | 12 | ~ | °C/W |
| Lifespan | ~ | ~ | >50,000 | ~ | hrs |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Forward Current | If | 800 | mA |
| Junction Temperature | Tj | 115 | °C |
| Operating Temperature | Topr | -40~+60 | °C |
| Storage Temperature | Tstg | 0~+60 | °C |
| ESD Sensitivity | ~ | +/- 2,000 V HBM | ~ |
| Temperature Coefficient of voltage | ~ | -5 | mV/ °C |
| DC Pulse Current(@ 1 KHz,10% duty cycle) | IFP | 1000 | mA |
| Reverse Voltage | VR | No reverse operation |
